 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BFS 483 NPN Silicon RF Transistor * For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA * fT = 8GHz F = 1.2dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS 40 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 245 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 483 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFS 483 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.4 0.13 1 - GHz pF 0.6 dB 1.2 2 - IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms 19 - IC = 15 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma |S21e|2 15 9.5 12.5 - IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFS 483 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 500 mW Ptot 400 TS 350 300 250 200 TA 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-16-1996 BFS 483 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.0 pF 8 GHZ Ccb 0.8 0.7 0.6 0.5 0.4 0.3 fT 6 8V 5 4 5V 3V 2V 3 2 0.2 0.1 0.0 0 4 8 12 16 V VR 22 1 0 0 10 20 30 40 50 1V 0.7V 60 mA 75 IC Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB G 16 14 12 10 8 8V 5V 3V G 8V 10 5V 8 2V 3V 6 1V 2V 4 6 0.7V 4 2 2 0 0 10 20 30 40 50 60 mA 75 IC 0 0 10 20 30 40 50 1V 0.7V 60 mA 75 IC Semiconductor Group 5 Dec-16-1996 BFS 483 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 20 VCE = Parameter, f = 900MHz 30 IC=15mA dB 0.9GHz dBm 8V G 16 0.9GHz 14 12 10 8 1.8GHz IP3 26 24 22 20 3V 5V 1.8GHz 18 2V 16 6 4 2 0 0 1 2 3 4 5 6 7 8 V 10 14 12 1V 10 8 0 4 8 12 16 20 24 28 32 mA 38 IC V CE Power Gain Gma, Gms = f(f) VCE = Parameter 32 dB 28 Power Gain |S21|2= f(f) VCE = Parameter 30 IC=15mA dB IC=15mA G 26 24 22 20 18 16 14 12 10 8 6 4 0.0 8V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 S21 20 15 10 5 8V 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHZ f 3.5 Semiconductor Group 6 Dec-16-1996 |
Price & Availability of BFS483
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |